Static and Transient Simulation of Inelastic Trap-Assisted Tunneling
نویسندگان
چکیده
We present an analytical model to describe static and transient trap-assisted inelastic tunneling of electrons through insulating energy barriers. The model was implemented in a device simulator in order to calculate the gate current in metal-oxidesemiconductor capacitors, the trap occupancy in the gate oxides and the charging and discharging characteristics in stressed electrically erasable programmable read-onlymemories. The model shows good agreement with experimental data.
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