Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots
نویسندگان
چکیده
We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decaytime when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.
منابع مشابه
Gain dynamics and ultrafast spectral hole burning in In„Ga...As self-organized quantum dots
Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In~Ga!As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملTime-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)
Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...
متن کاملTheoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAsÕGaAs quantum dots
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens-shaped InAs quantum dots within the ‘‘linear combination of bulk bands’’ method. We present a detailed comparison with experiment, including quantites such as the single-particle electron and hole energy level spacings, the excitonic band gap, the electron-electron, hole-hole, and electron-hole...
متن کاملWavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
متن کامل