Universal scheme for measuring the electron T1 in semiconductors and application to a lightly-doped n-GaAs sample
نویسندگان
چکیده
A new technique has been developed for measuring the T1 spin lifetime of electrons, and should have near universal applicability among III–V semiconductors. The technique has been applied to a lightly doped GaAs sample with n = 3 × 1014 cm−3. Spin decays were measured for fields from 0.5 to 7 T, at temperatures of 1.5 and 5 K. The spin lifetimes were shorter than expected, possibly due to compensation
منابع مشابه
خواص مغناطیسی نانولوله گالیوم آرسناید زیگزاگ (0,9) آلایشیافته با عناصر واسطه
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