A Double Silicon Drift Type Detector System for EDS with Ultrahigh Efficiency and Throughput for TEM
نویسندگان
چکیده
For elemental analysis with energy dispersive X-ray spectroscopy (EDS) in transmission electron microscopy (TEM), the demand for the improved efficiency of X-ray detection, a higher counting rate, is very strong, because the improvement not only results in high throughput, but also extends the method to the specimens fairly susceptible to electron beam damage. We have already developed and introduced into the market an advanced commercial EDS system with a large area silicon drift type detector (SDD). The sensor area of this SDD is as large as 100 mm 2 . The detection efficiency of X-ray in this system increases by approximately four times with respect to the one with a conventional Si (Li) type detector.
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