Spin split-off transition based IR detectors operating at high temperatures
نویسندگان
چکیده
GaAs/AlGaAs based Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors were used to demonstrate experimental split-off response that is based on hole transitions between light/heavy hole bands and the split-off band (spin-orbit). Preliminary results indicate that, this detection mechanism is more efficient than free carrier mechanism for NIR operation. An unoptimized, GaAs/AlGaAs detector with a free carrier threshold wavelength of 20 lm showed a maximum operating temperature of 130 K for split-off response in the range 1.5–5 lm with a peak D* of 1.0 · 10 Jones. By adjusting the free carrier threshold to match the splitoff threshold, it should be feasible to further increase the operating temperature. Analysis indicates that practical devices with properly optimized parameters are capable of achieving room temperature operation with higher specific detectivity. The possible ways to tailor the threshold, for the split-off response to different wavelength rangers using different materials such as phosphides and nitrites are also discussed. 2006 Elsevier B.V. All rights reserved. PACS: 71.55.Eq; 71.70. d; 71.70.Ej; 73.40.Ty
منابع مشابه
Operating temperature and the responsivity of split-off band detectors
1350-4495/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.infrared.2009.05.024 * Corresponding author. Tel.: +1 404 413 6037; fax E-mail address: [email protected] (A.G.U. Perera). A GaAs/AlGaAs heterojunction is used as a spin-split-off band IR detector operating at or around room temperature. This detector structure followed a similar layer architecture to the quantum well IR photo detect...
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