Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
نویسندگان
چکیده
Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, Chemical and Biochemical Reference Data Division, National Institute of Standards and Technology, Gaithersburg, MD 20899.
منابع مشابه
Observation of insulating and metallic-type behavior in Bi2Se3 transistor at room temperature
Recently, topological insulators (Bi2Se3, Bi2Te3 and Sb2Te3) have attracted much attention because of their bulk band gap (0.3 eV) and spin-polarized surface states with conductive massless Dirac Fermions [1]. Interestingly, Bi2Se3 has rhombohedral crystal structure which consists of Se or Bi lattices in stacked manner with the sequence of Se-Bi-Se-Bi-Se. This forms a sheet-like structure in wh...
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