Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure
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Charging effects in AlGaNÕGaN heterostructures probed using scanning capacitance microscopy
Charging effects in an AlxGa1 xN/GaN heterostructure field-effect transistor epitaxial layer structure have been studied using scanning capacitance microscopy. Voltages of 6 V applied between an AlxGa1 xN/GaN sample structure and a conducting proximal probe tip are found to create trapped charge in both doped and undoped heterostructures. Scanning capacitance measurements obtained over a wide r...
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