Superconductlng InGaAs junction field ... effect transistors with Nb electrodes
نویسندگان
چکیده
We describe the design, fabrication, and characterization of superconducting 1n0.47 GaO.53 As junction field-eftect transistors (JFETs) with Nb source and drain electrodes. In0.47 GaO.5 , As has the advantage of combining large coherence length and high Schottky barrier transmission. making it a very attractive material on which to base superconducting FETs. At large voltages these devices behave as normal FETs in either enhancement or depletion modes, while at small voltages they act as Josephson junctions or super-Schottky diodes. Both normal and supercurrents are controlled by the gate.
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