Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier

We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong nonequilibrium features. The electrons injected are redistributed quickly among several valleys. Spin relaxation driven by the spin–orbital coupling in the semiconductor is very rapid. At T = 4.2 K, injected spin polarization decays at a distance of the order of 50–100 nm from the interface. This spin penetration depth reduces approximately by half at room temperature. The spin scattering length is different for different valleys.