Cree Silicon Carbide Power White Paper: Highly Efficient, and Compact ZVS Resonant Full Bridge Converter Using 1200V SiC MOSFETs

Rev. Abstract The most recent version (C2MTM) of Silicon Carbide (SiC) devices is used in a Zero Voltage Switching (ZVS) converter application. A 1200V, 160mohm SiC MOSFET from Cree Inc. is used to design a high-frequency ZVS LLC resonant fullbridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFET, which has lower junction capacitance and low-on-state resistor compared to a silicon (Si) device, the resonant converter can achieve a high-frequency and high-efficiency, thus increasing the power density with fewer components and reducing total cost. An 8kW prototype is developed to demonstrate how the SiC MOSFET can help achieve the highest performance for a soft-switching DC/DC converter with the maximum efficiency measured at 98.3 percent. These types of converters can be commonly used in three-phase industrial power supply applications. These include telecom or server power converters, high-voltage DC (HVDC) systems, inductive heatings or electric vehicle (EV) chargers.