Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
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Optimal Design of GaN–AlGaN Bragg-Confined Structures for Intersubband Absorption in the Near-Infrared Spectral Range
A method is proposed for the design and optimization of structural parameters of GaN–AlGaN Bragg-confined structures with respect to peak intersubband absorption from the ground to the first excited state,1 2 electronic transition, in the near infrared spectral range. An above-the-barrier bound state was used to extend the range of transition energies above the values available in conventional ...
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A pulsed layer-by-layer deposition (PLLD) technique possessing triple growth rates compared to conventional growth techniques is developed by metal organic chemical vapor deposition to realize high-quality high-aluminum content ordered AlXGa(1 X)N (0.5<X). X-ray diffraction, photoluminescence, and transmission measurements are employed to demonstrate control over aluminum content, structural un...
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P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, ...
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GaN and AlN compounds have been proven useful in wide bandgap microelectronics and optoelectronics. Also properties of bulk GaN and AlN have been studied extensively. However, many characteristics of AlGaN/GaN superlattices are not well known. In particular, the properties of phonons have not been determined. In order to determine phonon properties, this study measured infrared reflectivity spe...
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