A compact HSPICE macromodel of resistive RAM
نویسندگان
چکیده
A compact but accurate HSPICE macromodel for singlebit resistive RAM (ReRAM) is proposed in this paper. This compact macromodel uses the minimum number of circuit elements to improve the HSPICE simulation speed. And, the macromodel is verified to show very good agreement with the measurements due to voltagecontrolled resistors used as the SET and RESET resistors in the macromodel describing well the complicated current-voltage relationship of the ReRAM. An extended version of the macromodel is also proposed and verified for multi-bit ReRAM, where its SET resistance and RESET voltage can vary according to the SET pulse width applied to the ReRAM.
منابع مشابه
Compact MEMS Modeling for Design Studies
A method for MEMS macromodel development is presented which is based on a physical device description to obtain mathematical relations for the device operation. Since design and technology parameters are input parameters of the resulting model, this method is well suited for design studies. As a benchmark problem, we refer to the macromodel of a micropump driven by an electrostatically actuated...
متن کاملDelay extraction-based passive macromodeling techniques for transmission line type interconnects characterized by tabulated multiport data
This paper introduces a novel algorithm for delay extraction-based passive macromodeling of multiconductor transmission line type interconnects characterized by multiport (Y, Z, S, or H) tabulated parameters. The algorithm determines a unique logarithm of the H parameters, which is then approximated using a low-order rational function. Subsequently, the DEPACT (delay extractionbased passive com...
متن کاملLogic-in-Memory (LiM) with a Non-Volatile Programmable Metallization Cell (PMC)
This paper introduces two new cells for Logic-inMemory (LiM) operation. The first novelty of these cells is the resistive RAM configuration that utilizes a Programmable Metallization Cell (PMC) as non-volatile element. CMOS transistors and ambipolar transistors are used as processing and control elements for the logic operations of the LiM cells. The first cell employs ambipolar transistors and...
متن کاملRTL delay macro-modeling with Vt and Vdd variability
Recent low-power design utilizes a variety of approaches for Vdd and Vt control to reduce dynamic and leakage power. It is important to be able to explore various low-power design options at a high-level early in the design process. Furthermore, process variation is becoming large and greatly affects the power and delay results. In particular, the delay analysis becomes very complicated and tim...
متن کاملA behavioral model of unipolar resistive RAMs and its application to HSPICE integration
Resistive RAMs (ReRAMs), where the resistance is changed by voltage and current biases, have extensively been studied to develop high-speed and large-capacity nonvolatile memories as well as functional nonvolatile memories. ReRAMs are so far intended for use as alternatives to contemporary flash memories, but the applications are not limited to Boolean alternatives. Although physical mechanisms...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 4 شماره
صفحات -
تاریخ انتشار 2007