Sub 100nm T-Gate Uniformity in InP HEMT Technology
نویسندگان
چکیده
This work describes the improved uniformity of short gate length (sub100nm) T-gate lithography observed for InP HEMT devices through the development of a nonannealed ohmic contact process. The incorporation of such a process allows the reversal of ohmic and gate levels as part of a standard device process flow. This eliminates fluctuations in the gate geometry that result from the spinning of gate resists across a non-planar surface i.e. between the source and drain contacts.
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