High-Performance High-!/Metal Gates for 45nm CMOS and Beyond with Gate-First Processing
نویسندگان
چکیده
Gate-First Processing M. Chudzik, B. Doris, R. Mo, J. Sleight, E. Cartier, C. Dewan, D. Park, H. Bu, W. Natzle, W. Yan, C. Ouyang, K. Henson, D. Boyd, S. Callegari, R. Carter, D. Casarotto, M. Gribelyuk, M. Hargrove, W. He, Y. Kim, B. Linder, N. Moumen, V.K. Paruchuri, J. Stathis, M. Steen, A. Vayshenker, X. Wang, S. Zafar, T. Ando, R. Iijima, M. Takayanagi, V. Narayanan, R. Wise, Y. Zhang, R. Divakaruni, M.Khare, T.C. Chen IBM Semiconductor Research and Development Center (SRDC), IBM Systems and Technology Division, Hopewell Junction, NY 12533, USA, Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, USA, Advanced Micro Devices, Inc. , 2070 Route 52 Hopewell Jct, NY 12533, 4 Sony Electronics [email protected]. Watson Research Center, Yorktown Heights, NY 10598, USA, Toshiba America Electronic Components [email protected]. Watson Research Center, Yorktown Heights, NY 10598, USA E-mail:[email protected]
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