Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study
نویسندگان
چکیده
R. Santoprete, 2 P. Kratzer, M. Scheffler, R. B. Capaz, and Belita Koiller Instituto de F́ısica, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, Brazil Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-Ecole Polytechnique, 91128 Palaiseau cedex, France Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany (Dated: February 2, 2008)
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Effects of Annealing on Electrical and Optical Properties of a Multilayer InAs/GaAs Quantum Dots System
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