Field-effect transistor made of individual V2O5 nanofibers
نویسندگان
چکیده
A field-effect transistor ~FET! with a channel length of ;100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5 nm310 nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7310 cm/V s at T5131 K to 9.6310 cm/V s at T5192 K with an activation energy of Ea50.18 eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ;4 nm. © 2000 American Institute of Physics. @S0003-6951~00!00714-2#
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