1 Transport and field emission properties of MoS 2 2 bilayers 3

We report the electrical characterization and the field emission properties of CVD-grown 12 bilayers deposited on / substrate. Current-voltage characteristics are measured in the 13 back-gate transistor configuration, with contacts patterned by electron beam lithography. We 14 confirm the n-type character of as-grown and we report normally-on field effect transistors. 15 Local characterization of field emission is performed inside a scanning electron microscope chamber 16 with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an 17 electric field of ~200 / is able to extract current from the flat part of bilayers, which 18 therefore can be conveniently exploited for field emission applications even in low field19 enhancement configurations. We show that a Fowler-Nordheim model, modified to account for 20 electron confinement in 2D materials, fully describes the emission process. 21