Super sequential lateral growth of Nd:YAG laser crystallized hydrogenated amorphous silicon

Lateral growth crystallization of hydrogenated amorphous silicon with single and multiple pulse excitation using a Nd:YAG laser at a wavelength of 532 nm and a 3 ns pulse width at a repetition of 10 Hz is shown. With single pulse crystallization, large grain sizes of the order of 1 mm were obtained with an energy density .400 mJ/cm, and these have been studied using transmission electron microscopy ~TEM! and atomic force microscopy. We show that, by using extremely short ~3 ns! multiple pulse excitation of significantly lower powers ~,150 mJ/cm!, than that used to crystallize amorphous silicon with single pulse excitation, a uniform growth of crystalline grains is observed. TEM gives evidence for lateral grain growth with multiple pulse crystallization at low energies. We suggest that a ‘‘super sequential lateral growth’’ mechanism is occurring. © 2001 American Institute of Physics. @DOI: 10.1063/1.1337627#