A radiation tolerant 4T pixel for space applications: layout and process optimization
نویسنده
چکیده
Space applications require image sensors that are tolerant to the harsh radiation conditions outside the earth’s atmosphere. This paper reports about an ongoing optimization experiment for radiation tolerant 4T pixels. The experiment is conducted in a 0.18μm CMOS image sensor process and involves optimization of both the layout and the process technology. The purpose of the experiment is to minimize the end-of-life dark current for a star tracker application while meeting all other electrooptical specifications. This implies tolerance to both ionizing dose and displacement damage.
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