Spontaneous oxide reduction in metal stacks
نویسندگان
چکیده
Aluminum and copper interconnects are widely used for microelectronic applications. A problem can arise when interfacial oxides are present. Such oxides can significantly degrade device performance by increasing electrical resistance. This paper describes analyses of interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks. The analyses were performed through transmission electron microscopy (TEM). The data indicated that the interfacial oxides resulted from spontaneous reductions; that is, Al spontaneously reduced Ta2O5 to form Al2O3, while Ta spontaneously reduced Cu oxide to form Ta2O5. D 2004 Elsevier B.V. All rights reserved. PACS: 82.65.Dp; 68.35; 73.90.+f; 61.16.Bg; 82.80.Pv
منابع مشابه
Oxide Reduction in Advanced Metal Stacks for Microelectronic Applications
Aluminum and copper are widely used for microelectronic interconnect applications. Interfacial oxides can cause device performance degradation and failure by significantly increasing electrical resistance. Interfacial oxide layers found in Al/Ta and Ta/Cu metal stacks were studied using Transmission Electron Microscopy (TEM) combined with Energy Dispersive Spectroscopy (EDS) and Parallel Electr...
متن کاملDegradation of the high-k dielectric/metal gate stacks under electrical stress
Recent HK reliability studies reflect increasingly complex and diverse gate stack structures fabricated to meet device scaling requirements. Essential progress towards achieving low values of the threshold voltage was made through the introduction of the metal oxide capping layers in gate stacks that, in turn, instigated a number of reliability studies of these systems. Employing fast measureme...
متن کاملMetal Oxide/Pt Based Nanocomposites as Electrocatalysts for Oxygen Reduction Reaction
Fuel cell is a promising choice for clean energy because of its eco-friendly system, high energy conversion efficiency and high power density. Recently, much of the research work is focused on the system of combining metal oxides to increase the durability and surface area and to reduce the cost. In this study, among the various fabrication methods, we used the precipitation method to synthesis...
متن کاملModeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors
The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the nature of these layers. In this paper we specifically investigated the boron out-diffusion from a silicon junction into the silicon oxide in presence of a silicon oxide/s...
متن کاملTernary self-assembly of ordered metal oxide-graphene nanocomposites for electrochemical energy storage.
Surfactant or polymer directed self-assembly has been widely investigated to prepare nanostructured metal oxides, semiconductors, and polymers, but this approach is mostly limited to two-phase materials, organic/inorganic hybrids, and nanoparticle or polymer-based nanocomposites. Self-assembled nanostructures from more complex, multiscale, and multiphase building blocks have been investigated w...
متن کامل