Flicker Noise Characterization and Modeling of Homo and Hetero-Junction III-V Tunnel FETs

Introduction:GaAsySb1-y/In0xGa1-xAs based III-V staggered hetero-junction Tunnel Field Effect Transistors were demonstrated with MOSFET-like high drive currents at low Vds [1], demonstrating feasibility of TFETs to scale supply voltage for future low power logic applications. More than 2x enhancement in Ion was demonstrated over the In0.7Ga0.3As homo-junction counterpart due to reduction in the effective tunneling barrier (Ebeff) at the heterointerface. In this work, we characterize the flicker noise performance of In0.7Ga0.3As homojuntion and GaAs0.35Sb0.65/In0.7Ga0.3As heterojunction TFETs to quantify the impact of heterointerface on flicker noise which is an important figure-of-merit for analog and RF applications. We show that heterojunction TFETs exhibit lower flicker noise levels along with higher drive currents. Finally, a number fluctuation based analytical model is developed to model the flicker noise characteristics of both Homo and Hetero-Junction Tunnel FETs.