Modelling of Resolution Enhancement Processes in Lithography - Microelectronics, 1995. Proceedings., 1995 20th International Conference on
نویسندگان
چکیده
This paper describes the modelling and simulation of two resolution enhancement techniques in lithography ; 1) phase shift mask (PSM) technology and 2) top surface imaging (TSI) with silylation and dry development. The effect of the duty ratio on the image contrast is computed. Simulated one and two dimensional rim shifters and attenuated PSMs are presented. The effect of the aerial image on the silylation profile for the top imaging processes, DESIRE and PRIME, is also presented. The effect of the first etch step on the final resist profiles is examined. The partial pressure and the presence of magnetic fields are also presented.
منابع مشابه
A Proposal for the Implementation of Ternary Digital Circuits - Microelectronics, 1995. Proceedings., 1995 20th International Conference on
A nonclassical multi-valued logic based on Post algebra is presented. Besides the conventional Post's cyclic negation, this nonclassical logic algebra defines new operators that simplify the truth-table minimization techniques. An electronic implementation of this algebra for a 3-level logic is proposed. Electronics gates of Post negation and the new operators were designed and simulated using ...
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The neuron-MOS (neu-MOS) transistor, recently discovered by Shibata and Ohmi in 1991 [T. Shibata, T. Ohmi, International Electron Devices Meeting, Technical Digest, 1991] uses capacitively coupled inputs onto a floating gate. Neu-MOS enables the design of conventional analog and digital integrated circuits with a significant reduction in transistor count [L.S.Y. Wong, C.Y. Kwok, G.A. Rigby, in:...
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