(2 x 2) reconstructions of the {111} polar surfaces of GaAs.

A new type of reconstruction on the InSb( 111) surface determined by grazing incidence X-ray diffraction

The (3 X 3) reconstruction of the InSb(iii> surface has been investigated by grazing incidence X-ray diffraction and scanning tunneling microscopy. The structure is characterized by 6-atom rings on top of a slightly buckled InSb top double layer. Two types of rings have been found, an elliptic ring consisting of 4 In and 2 Sb atoms and a trigonal ring with 3 In and 3 Sb atoms. The bond angles a...

Ab initio theory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111).

Reconstructions of the InP„111...A surface

Indium phosphide was deposited on InP(111)A substrates by metalorganic vapor-phase epitaxy. Then, the surface was characterized by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. Two reconstructions were observed: the (232) and the ()3))R30° with phosphorus coverages of 0.25 and 1.0060.05 ML ~monolayers!, respectively. The (232) was found to...

Water-driven structural evolution of the polar MgO (111) surface: An integrated experimental and theoretical approach

We report an experimental and theoretical analysis of the 3 3-R30° and 2 2 reconstructions on the MgO 111 surface combining transmission electron microscopy, x-ray photoelectron spectroscopy, and reasonably accurate density functional calculations using the meta-generalized gradient approximation functional TPSS Tao, Perdew, Staroverov, and Scuseria, Phys. Rev. Lett. 91, 146401 2003 . The exper...

Interaction of Mn with GaAs and InSb

The deposition of Mn on to reconstructed InSb and GaAs surfaces, without coincident As or Sb flux, has been studied by reflection high energy electron diffraction, atomic force microscopy and scanning tunnelling microscopy. On both Gaand As-terminated GaAs(0 0 1), (2× n) Mn-induced reconstruction domains arise with n = 2 for the most well ordered reconstructions. On the Ga-terminated (4× 6), th...