Static-Noise-Margin Analysis of Modified 6T SRAM Cell during Read Operation
نویسندگان
چکیده
As modern technology is spreading fast, it is very important to design low power, high performance, fast responding SRAM(Static Random Access Memory) since they are critical component in high performance processors. In this paper we discuss about the noise effect of different SRAM circuits during read operation which hinders the stability of the SRAM cell. This paper also represents a modified 6T SRAM cell which increases the cell stability without increasing transistor count.
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