A Miniaturized Monolithic 2.4/5.7 GHz Concurrent Dual-Band Low Noise Amplifier Using InGaP/GaAs HBT Technology

This paper presents the design and experimental results of a miniaturized monolithic 2.4/5.7 GHz concurrent dual-band low noise amplifier with cascade configuration using InGaP/GaAs HBT technology for the first time. The first stage of the LNA provides high gain and input matching simultaneously at both 2.4 GHz and 5.7 GHz bands. The output matching of the second stage is realized by shunt-shunt feedback. It consumes only 9 mW power and achieves transducer gains (S21) of 24.8 dB and 15.7 dB, input return losses (S11) of -23.6 dB and -22.6 dB, output return losses (S22) of -15.3 dB and -21.5 dB, reverse isolation (S12) of -48.0 dB and -44.4 dB, and noise figures of 3.42 dB and 2.72 dB at 2.4 GHz and 5.7 GHz, respectively. The LNA only occupies an area of 650 μm × 300 μm excluding the test pads because only two inductors are used. Key-Words: Low Noise Amplifier, Dual-band, Concurrent, InGaP/GaAs HBT.