Voltage optimization for simultaneous energy efficiency and temperature variation resilience in CMOS circuits

نویسندگان

  • Ranjith Kumar
  • Volkan Kursun
چکیده

A design technique based on optimizing the supply voltage for simultaneously achieving energy efficiency and temperature variation insensitive circuit performance is proposed in this paper. The supply voltages that suppress the propagation delay variations when the temperature fluctuates are identified for a diverse set of circuits in 180 and 65 nm CMOS technologies. Circuits display temperature variation insensitive propagation delay when operated at a supply voltage 44–47% lower than the nominal supply voltage ðVDD 1⁄4 1:8VÞ in a 180 nm CMOS technology. Similarly, the optimum supply voltages are 67–68% lower than the nominal supply voltage ðVDD 1⁄4 1:0VÞ in a 65 nm CMOS technology. At scaled supply voltages, integrated circuits consume lower power at the cost of reduced speed. The proposed design methodology of optimizing the supply voltage for temperature variation insensitive circuit performance is, therefore, particularly attractive for low-power applications with relaxed speed requirements. A new design methodology based on threshold voltage optimization for achieving temperature variation insensitive circuit speed is also evaluated. The energy per cycle and the propagation delay at the supply and threshold voltages providing temperature variation insensitive circuit performance, minimum energy-delay product, and minimum energy are compared. Results indicate that low-power operation and temperature variation tolerance can be simultaneously achieved with the proposed techniques. r 2007 Elsevier Ltd. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Temperature Adaptive and Variation Tolerant Cmos Circuits

The imbalanced utilization and the diversity of circuitry cause on-chip temperature gradients. Different sections of high-performance integrated circuits typically operate at different temperatures. Furthermore, environmental temperature fluctuations can cause significant variations in the die temperature. Temperature fluctuations alter the speed characteristics of CMOS circuits. Several techni...

متن کامل

Simultaneous Optimization of Standby and Active Energy for Sub-threshold Circuits

Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold...

متن کامل

Power-Efficiency Driven Device Sizing of Pass- Transistor Digital Circuits in Low-Voltage CMOS

This paper presents the results of a comprehensive investigation of the effects device sizing, complexity and scalability on the driver capacitance (Cd) to the total load capacitance (Ctotal) ratio and its impact on maximum power-efficiency of pass transistor digital circuits in low-voltage CMOS. The study also analyzes the impact of temperature variations on the optimum supply voltage and on t...

متن کامل

A Temperature Compensation Voltage Controlled Oscillator Using a Complementary to Absolute Temperature Voltage Reference

This paper presents a temperature compensation voltage controlled oscillator (VCO) based on Cross-Coupled pair and Colpitts structures which is suitable for military fields. Also, two inductors have been used for increasing the negative conductance. By using this method, start-up condition has been improved. Two varactors and a simple capacitor bank are applied for covering a wide tunning range...

متن کامل

Power Minimization by Simultaneous Dual - Vth Assignment and Gate -

|Gate-sizing is an eeective technique to optimize CMOS circuits for dynamic power dissipation and performance while dual-V th (threshold voltage) CMOS is ideal for leakage power reduction in low voltage circuits. This paper focuses on simultaneous dual-V th assignment and gate-sizing to minimize the total power dissipation while maintaining high performance. An accurate power dissipation model ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Microelectronics Journal

دوره 38  شماره 

صفحات  -

تاریخ انتشار 2007