High Voltage Capacitors with Increased Lifetimes Using SiN Dielectrics
نویسنده
چکیده
We present ramped voltage data from a new nitride used in our fabrication process. Using the same fabrication flow, we measured increased lifetimes for capacitors using this new dielectric. Using the linear field model, this translates into capacitors that can sustain higher applied voltages before they fail.
منابع مشابه
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric
0026-2714/$ see front matter 2008 Elsevier Ltd. A doi:10.1016/j.microrel.2008.06.043 * Corresponding author. Tel.: +32 55 332343. E-mail address: [email protected] (J. Ackae Metal–insulator–metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB lifetime, breakdown voltage and leakage current. In this article, the correlation is determined between these electri...
متن کاملA Modified Series Z-Source Inverter Based on Switched Inductors with High Voltage Gain and Reduced Voltage Stress on Capacitors
In this paper, a series Z-source inverter based on switched inductors cell is proposed for the first time. This inverter is able to increase the voltage gain in comparison to the conventional Z–source inverters in additon to solve the ST (shoot-through) state’s problems. In this inverter, the value of voltage gain is increased by increasing the number of used diodes and inductors in the switche...
متن کاملLifetime Estimation of Intrinsic Silicon Nitride MIM Capacitors in a GaN MMIC Process
We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 0 C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a dielectric thickness of 400nm exhibit lifetimes as long as 1.48E10 hours under such conditions.
متن کاملEffect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application
Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV) have been chosen for the evolution of Ge-NCs, which have been found to possess significa...
متن کاملA New System of Contactless Power Transfer with Low Voltage Stress and Parasitic Capacitors Effect
In this paper, a high frequency contactless power transfer (CPT) system is designed with ∅2 inverter drive. This system works in 30MHz frequency and 380W power with low voltage stress and considers the inductive link parasitic capacitor effect. In the design, we formulated the inverter equations first and then suggested another design for the transmitter and the receiver coils as the energy tra...
متن کامل