Simulation and Analysis of DG-MOSFET for Ultra Low Power

The low power consumption and good speed has become an important issues in the minds of consumers as electronic items are increasing in every houses, everyday. VLSI has been very successful in this aspect as new and new technologies are been developed in VLSI, which has lead, a solution to the above problem. DG MOSFET, proposed in 1984 as “XMOS” by ETL is the most promising and leading contender for nano regime devices. It has been expected to be the most advanced transistor giving a breakthrough to the scaling limit due to increasing leak current and short channel effects in the ordinary singlegate MOSFET. However, the conventional double-gate MOSFET with combined two gates held at an identical voltage has to work in a 3-terminal mode. The newly developed double-gate MOSFET can be driven in a genuine 4terminal mode with independent two gates controlled separately. This means that the transistor operation speed can be controlled to an optimum, and the power loss caused by leak current during standby is substantially nullified. That is, the new technology will open the way to the implementation of the ultra-low power LSI characterized by optimum power control without sacrificing operation speed. The 4-terminal driven double-gate MOSFET can also be regarded as a MOSFET equipped with an arithmetic operation feature based on independent twoinput reduction of the number of devices in VLSIs. Keywords—DG Mosfet, threshold voltage, subthreshold swing, Mosfet scaling, DIBL, Drain Leakage Current (Ioff) Objective Project Significance / Relevance with ongoing academic activities:With new and new technology coming in and new electronic devices been introduced very second, our aim is to get the best performance from these devices. In order to get better results we need to improve our object used and there parameters thus nullifying undesired outcomes, thus resulting in low power and good speed of the device. We are aware that DG Mosfet can perform better than conventional devices like CMOS, MOS, etc.., Thus when DG Mosfet will replace the conventional objects in electronic devices we will get extremely better results. We just need to do variations with some of the parameters in order to get the desired outcomes and implement the same. Previously, CMOS, MOS, or even conventional DG Mosfet were used in which both the gates where provided with same voltage. But when we provide both gates of DG Mosfet with different voltages we are able to control the channel with both sides and thus have better eelectrostatic control over the channel, so we can perform more scaling of gate length. Due to better control on short channel effects DG Mosfet is better alternative of conventional bulk MOSFET and it has higher current density, higher sub threshold Simulation and Analysis of DG-MOSFET for Ultra Low Power International Journal of Modern Engineering & Management Research Website: www.ijmemr.org Volume 1, Issue 2, July 2013 ISSN: 2320-9984 (Online) Sara Varghese M.Tech (Embedded System and VLSI Design) Department of Electronics and Communication G.G.I.T.S, Jabalpur (M.P.) [INDIA] Email : [email protected]