Deformation measurement from atomic-resolution images using geometric phase analysis Seminar Thesis
نویسندگان
چکیده
منابع مشابه
Measuring Strain Fields surrounding Grain-Boundary Dislocations in Silicon using Scanning Transmission Electron Microscopy
Mapping atomic displacement at the nanoscale is crucial for developing and optimizing strain-engineered devices. In today’s transistors, a slight deformation of the silicon lattice in the source-drain regions enhances their performance. And in the future, strain-induced electro-optic effects may potentially form the basis of an all-silicon electronic and photonic device. Transmission electron m...
متن کاملGeometric Phase Analysis of High Resolution Electron Microscope Images
A new method is described for analysing high resolution lattice fringe images. The image is considered to be composed of a reduced set of major image periodicities. Each periodicity has an associated Fourier component which is allowed to vary as a function of position. It is shown that the local amplitude and geometric phase of lattice fringes can be determined in this way by filtering in Fouri...
متن کاملLocal Strain Measurements at Dislocations, Disclinations and Domain Boundaries
High-resolution images can be analysed by geometric phase analysis (GPA) [3] or applying peak-finding routines to determine the positions of individual atomic columns. GPA is best adapted to measuring the deformation of the crystalline lattice, as the example concerning a five-fold twinned Pt nanoparticle will show (Figure 1). These star-shaped particles [4] have a disclination-like strain fiel...
متن کاملStrategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z- contrast STEM images
Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum dot materials. In this work, GPA has been applied to high resolution Z-contrast scanning transmission electron microscopy (STEM) images. Strain maps determined from different g...
متن کاملIn situ high temperature creep deformation of micro-structure with metal film wire on flexible membrane using geometric phase analysis
A way of measuring the in situ high temperature creep deformation of a micro-structure with a metal film wire on a flexible membrane is developed. The creep deformation measurement of a micro-structure with a Karma alloy wire on a polyimide membrane is used as an application. High temperature gratings were fabricated directly on the surfaces of two Karma alloy wires using the focused ion beam m...
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