Evidence of carbon-carbon bond formation on GaAs(100) via Fischer-Tropsch methylene insertion reaction mechanism.
نویسندگان
چکیده
Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 x 1) occurs to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.
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ورودعنوان ژورنال:
- Chemical communications
دوره 34 شماره
صفحات -
تاریخ انتشار 2005