GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors
نویسندگان
چکیده
The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (\40 mm) detectors is briefly reviewed. The emphasis is on the detector performance, which includes responsivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, noise, and negative capacitance characteristics. Promising results indicate that p-GaAs HIWIP detectors have great potential to become a strong competitor in far-infrared applications. © 2000 Elsevier Science S.A. All rights reserved.
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