Electrical and Optical Properties on Nanocrystalline Si/SiO2 Superlattice for Solar Cell Emitters
نویسندگان
چکیده
In this study, we made the heterojunction solar cells on Si substrate by fabricating a nanocrystalline Si/SiO2 superlattice emitter structure. Amorphous silicon and silicon dioxide superlattice were prepared by rf Si sputtering and plasma oxidation, respectively. The deposited amorphous silicon was crystallized at high temperature. Microstructure studies by TEM show that amorphous silicon was changed to nanocrystalline silicon. The optical bandgap of the superlattice depends on the Si layer thickness. Cells with an Al/ZnO:Al/(Si/SiO2)n/Si structure show 1.4% conversion efficiency (Voc: 112mV, Jsc: 32.3mA/cm). Furthermore, the optical and electrical properties of (Si/SiO2)n/Si superlattice structure are reported.
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