Direct evidence for implanted Fe on substitutional Ga sites in GaN
نویسندگان
چکیده
The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope Mn at a dose of 1.0×10 cm and annealing up to 900°C, the angular distribution of β particles emitted by the radioactive isotope Fe was measured by a position-sensitive electron detector. The β emission patterns around the [0001], [1102], [1101] and [2113] directions give direct evidence that the majority of Fe (80%) occupies substitutional Ga sites.
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