Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclas...

Giant Magnetoresistance Induced by Magnetic Barriers

We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnet barriers. Magnetoresistances, , of 1000% are found at low temperatures and 1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature .

Supporting Information for adma200500737 Magnetocapacitance and Magnetoresistance Near Room Temperature in a Ferromagnetic Semiconductor: La2NiMnO6

Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature TC near or over room temperature and this will facilitate the introduction of new devices that make use of the...

Spin-orbit coupling in an In0.52Ga0.48As quantum well with two populated subbands

Structural inversion asymmetry controls the magnitude of Rashba spin-orbit coupling in the electron energy spectrum of a narrow band gap semiconductor. We investigate this effect for a series of two-dimensional electron gases in In0.52Ga0.48As quantum wells, surrounded by In0.52Al0.48As barriers, where either one or two electric subbands are populated. Structural inversion asymmetry does not ex...