Optical generation of polarized photoluminescence from GaAs(100)
نویسندگان
چکیده
Zhan Hu, Sima Singha, Daniel H. Rich, and Robert J. Gordon Department of Chemistry, University of Illinois at Chicago, Chicago, Illinois 60607, USA Institute of Atomic and Molecular Physics, Jilin University, Changchun 130021, People’s Republic of China Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O.B 653, Beer-Sheva 84105, Israel
منابع مشابه
Investigation of fast and slow decays in InGaN/GaN quantum wells
Related Articles The effect of In-flush on the optical anisotropy of InAs/GaAs quantum dots J. Appl. Phys. 111, 033510 (2012) Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures J. Appl. Phys. 111, 033103 (2012) Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Appl. Phys. Lett. 100, 052114 (2012) Growth and photolu...
متن کاملMeasurement of the Deformation Potentials for GaAs using Polarized Photoluminescence
The deformation potentials a, b and d for GaAs have been determined from polarized photoluminescence measurements upon a set of epitaxially grown strained.GaAs structures possessing varying levels of compressive biaxial lattice strain. X-ray diffraction measurements yield values for the degree of lattice strain while the polarized photoluminescence measurements permit a separate determination o...
متن کاملOptically driven spin memory in n-doped InAs-GaAs quantum dots.
We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.
متن کاملInfluence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2 misorientation angle towards [01-1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0 to 15.8 , a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-reso...
متن کاملEnhanced Exciton–Phonon Coupling in Spherical GaAs Nanocrystals Studied by Selective Excitation Spectroscopy
Phonon-assisted exciton transitions in spherical GaAs nanocrystals embedded in SiO2 matrices have been studied by means of selective excitation spectroscopy. The optical and acoustic phononassisted optical transitions appear in the photoluminescence excitation, photoluminescence linenarrowing, and photoluminescence hole-burning spectra at low temperatures. Both direct (zerophonon) and phonon-as...
متن کامل