Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations
نویسندگان
چکیده
Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2 and WS2 have successfully been fabricated on SiO2 substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2 monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm2/V·s. The crystalline flakes of WS2 are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm2/V·s.
منابع مشابه
Design of Biosensors Based Transition-Metal Dichalcogenide for DNA-base Detection: A First-Principles Density Functional Theory Study
The main function purpose of nanobiosensors is to sense a biologically specific material and the kind of sensing platform and doping engineering has been an emerging topic and plays an important role in monolayer molybdenum disulfide (mMoS2). In this paper, we theoretically reveal the electronic structures of mMoS2 doped by 3d transition metals. Furthermore, adsorption of nucleic acid [Adenine ...
متن کاملStrain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides
Articles you may be interested in Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study Electronic and thermoelectric properties of few-layer transition metal dichalcogenides Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel Band alignment ...
متن کاملCoherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2.
Transition metal dichalcogenides are predicted to outperform traditional semiconductors in ballistic devices with nanoscale channel lengths. So far, experimental studies on charge transport in transition metal dichalcogenides are limited to the diffusive regime. Here we show, using ReS2 as an example, all-optical injection, detection, and coherent control of ballistic currents. By utilizing qua...
متن کاملDefect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides.
It is well established that defects strongly influence properties in two-dimensional materials. For graphene, atomic defects activate the Raman-active centrosymmetric A1g ring-breathing mode known as the D-peak. The relative intensity of this D-peak compared to the G-band peak is the most widely accepted measure of the quality of graphene films. However, no such metric exists for monolayer semi...
متن کاملLayered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-e...
متن کامل