Electrical Reliability of GaN High Electron Mobility Transistors
نویسنده
چکیده
As a result of their large band gap (~3.4 eV) and high breakdown electric field (>3x106 V/cm), GaN-based devices can operate at voltages higher than 100 V. Also, due to the strong piezoelectric effect and spontaneous polarization of both GaN and AlN, a high sheet carrier density (~1013 cm-2) can be achieved at the AlGaN/GaN heterointerface without any doping. In addition, high electron mobility (~1500 cm2/V-s) and high saturation velocity (~2x107 cm/s) make GaN-based devices, especially GaN high electron mobility transistors (HEMT), suitable for high power amplification at high frequencies, such as WiMAX or WLAN base stations and radars.
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