Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications
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چکیده
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First-Principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue MaterialsThe work is supported by the National Natural Science Foundation of China (No. 20873127) and Air Products and Chemicals, Inc. (USA)
Particle aggregation and film agglomeration have been among the main technical hurdles for solid-state thin film development and have been observed in many semiconductor and catalytic systems. In heterogeneous catalysis, particle aggregation leads to reduction of effective surface area and degradation of catalytic performance. On semiconductor surfaces, film agglomeration may give rise to elect...
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