Frequency Dependence of Capacitance Measurement for Advanced Gate Dielectrics
نویسندگان
چکیده
1. Introduction Capacitance-voltage (C-V) measurements are a fundamental characterization technique for MOS devices. However, as the oxide thickness is reduced and gate dielectrics comprised of stacks of novel materials are employed, CV measurement and analysis are made more complex by the frequency-dependence of the measured capacitance. This paper presents an analysis of the sources of the frequency-dependence with guidelines for interpreting frequency-dependent capacitance data.
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