Double quantum dot Si single-electron transistor with multiple gate electrodes fabricated by PADOX
نویسندگان
چکیده
Double quantum dots (DQDs) are well known as devices for quantum information processing. For this usage, it is important to control the capacitive coupling between the two quantum dots. We have fabricated a DQD Si single-electron transistor (DQD SiSET) with multiple gate electrodes and clarified the fact that the capacitive coupling of the Si-DQDs is tunable by controlling the number of electrons in QDs. The reason is attributed to the change of the effective QD size due to the change in the number of the electrons in the QDs.
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