Weak localisation theory for lightly doped semiconductor quantum wires
نویسنده
چکیده
A weak localisation theory for a semiconductor quantum wire, which has a width of the order of the Fermi wavelength, is presented. In our model the electronic motion is essentially one-dimensional and the localisation length L, is much larger than the mean free path I , so that, in contrast to conventional theories a non-localised quantum wire with a total length L < L, but much larger than I is possible. For the static properties, we study the temperature dependence and the subbands effect of the weak localisation. We find that when (the phase coherent length) L, > L , the conductance of the quantum wire depends on L instead of L,, implying a temperature independent behaviour. Our theory explains recent experiments which found temperature independent transport behaviour at very low temperature for narrow AlGaAs/GaAs quantum wire. In studying the AC conductivity, our calculation predicts that, for the quantum wire with L > L, , there exists a critical value of the frequency above which the system is delocalised and the AC conductivity a (w) rises as w2.
منابع مشابه
Quantization of electromagnetic fields in the presence of a spherical semiconductor quantum dot and spontaneous decay of an excited atom doped in this nanostructure
In this paper we consider electromagnetic field quantization in the presence of a dispersive and absorbing semiconductor quantum dot. By using macroscopic approach and Green's function method, quantization of electromagnetic field is investigated. Interaction of a two-level atom , which is doped in a semiconductor quantum dot, with the quantized field is considered and its spontaneous emission ...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملLow Energy Effective Action of Lightly Doped Two-Leg t-J Ladders
We derive the low energy effective action of lightly doped two-leg t-J ladders with the help of slave fermion technique. Because of the underlying spin liquid state, we can assume the existence of a short-ranged antiferromagnetic order for some range of parameters in the lightly doped case. This leads to the usual t ′ − J model. The continum limit of this model consists of two kinds of Dirac fe...
متن کامل0 D ec 1 99 3 Theory of Coexisting Transverse Spin Freezing and Long - Ranged Antiferromagnetic Order in Lightly Doped La 2 − x Sr x CuO
We provide an explanation of the spin–freezing transition recently observed by Chou et al. for x < ∼ .02. We propose that topological excitations of the 2D Heisenberg quantum antiferromagnet having non–coplanar transverse components have a pair–interaction energy that qualitatively and quantitatively agrees with the observed values of spin–freezing temperature as a function of doping.
متن کامل