The Influence of the Nanometer Technology on Performance of CPL Full Adders

نویسندگان

Abdoul Rjoub

Al-Mamoon Al-Othman

چکیده

In this paper the performance of 8-transistor based Full adder is analyzed, evaluated, and compared with that of three different types of Full Adders based on Complementary Pass Transistor XOR Logic gate. Simulation results using nano-scale SPICE parameters are obtained for the above mentioned FAs. It is shown that the performance of the 8-transistor based Full adder in term of power dissipation is superior to that of the other FAs. MultiSupply Voltage Technique is used to optimize the outputs of 8-Transistor Full Adder. A new technique based on minimum leakage vector is proposed to reduce the leakage current when the circuit is in its off state.

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