Influence of Dislocations on Nitrogen±Oxygen Complex in Silicon
نویسندگان
چکیده
The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with dislocations was almost the same as in dislocation-free NCZ silicon. However, the N±O complexes in NCZ silicon with dislocations were annihilated after annealing for only 2 h, while those complexes in dislocation-free NCZ silicon were annihilated after annealing for 60 h. It is considered that the formation of N±O complexes is suppressed by dislocations and its mechanism is also discussed.
منابع مشابه
Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE)
The range distributions of low-energy nitrogen and oxygen (2-3 keV) ions is silicon are measured and compared with these available in theories. The nitrogen distribution is very close to a Gaussian distribution as predicted by theory. The oxygen profile however, indicates a surface localized peak along with a shoulder and a long tail into the sample. The surface peak is beleived to he the resul...
متن کاملNitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
Dislocation locking experiments have been used to investigate nitrogen-doped float-zone silicon (NFZ-Si). Experiments on NFZ-Si with a nitrogen concentration of 2.2 × 10 cm were carried out at different annealing temperatures (550–830 °C) for different annealing times (0–1500 hours) and experiments on NFZ-Si with a nitrogen concentration of 3 × 10 cm were carried out at 600 °C for 0–1200 hours....
متن کاملCytotoxic and anticancer studies of an oxygen and nitrogen donor novel Schiff base ligand and its copper (II) complex
A selected solid complex of the Schiff base ligand derived from Glutaric anhydride with Cu(II) ion was synthesized and characterized by FT-IR, Electronic, ESR Spectral Analyses, Magnetic susceptibility and Molar Conductance Measurements. The disappearance of ν(O-H) hydroxyl band of the phenolic and the lowering shift of the stretching frequency of the ν(CH=N) azomethine band in the ligand after...
متن کاملOrigin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing
Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational levels. Special role of dislocations in the surface layer of silicon during the formation of its ene...
متن کاملInfluence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
We have applied a low-energy positron beam and secondary ion mass spectrometry to study defects in homoepitaxial and heteroepitaxial GaN layers. Positron experiments reveal high concentrations of Ga vacancies in nominally undoped n-type GaN, where the conductivity is due to unintentional oxygen incorporation. Ga vacancies are observed in both homoepitaxial and heteroepitaxial layers, indicating...
متن کامل