Shifting the light emitting component from core to shell: an effective approach to improve the efficiency of light-emitting diodes based on multi-junction quantum materials.

Herein, using the light emitting component as the inner shell, we construct an advanced quantum-dot-quantum-well structure, ZnCdS/CdSe/CdZnSeS/ZnS, and use it for the fabrication of a light-emitting-diode. In comparison with the device containing conventional structured quantum dots, CdSe/CdZnSeS/ZnS, the advanced device possesses a superior performance in aspects of luminance, current efficiency, turn-on voltage and emitting wavelength tunability. Therefore, this paper indicates a promising strategy for the fabrication of light emitting devices based on quantum materials.