High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
نویسندگان
چکیده
templates with reduced interface impurity levels G. Koblmüller, R. M. Chu, A. Raman, U. K. Mishra, and J. S. Speck Department of Materials, University of California, Santa Barbara, California 93106, USA Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany
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