Structural differences in Mg-doped InN – indication of polytypism
نویسندگان
چکیده
Transmission Electron Microscopy shows that the InN samples doped with either increasing or constant Mg concentration follow a cation or anion substrate polarity. In-polar samples change growth polarity when the Mg concentration is >10 cm. N-polar samples have much higher density of planar defects than In-polar samples and their presence leads to a decrease in dislocation density. In the N-polar samples equally spaced planar defects are observed for Mg concentration >10 cm. Three different polytypes (2H, 3C and 4H) were observed in this type of samples. A band of planar defects with thick layers of a cubic material (3C) is observed for Mg concentration >10 cm. At this Mg concentration only n-type conductivity was reported earlier.
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