Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor
نویسندگان
چکیده
The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for both semiconductors. The obtained current-voltage characteristics are compared and their temperature dependence is discussed. A hypothetic SiC PN diode has a much higher knee voltage and a wider extrinsic or operating temperature range, and the same applies to SiC BJT, which altogether makes SiC devices more appropriate for high-temperature and high-power applications.
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