Final Report : Multicharged Ion Promoted Desorption ( MIPD ) of Reaction Co - Products Report

Number of Papers published in peer-reviewed journals: Number of Papers published in non peer-reviewed journals: Final Report: Multicharged Ion Promoted Desorption (MIPD) of Reaction Co-Products Report Title Multicharged ions (MCIs) produced in a new, electron beam ion trap (EBIT) based ion source, were investigated as a means of inducing athermal surface reactions for thin film processing. The specific surface systems investigated were highly oriented pyrolytic graphite (HOPG), nanodiamond (ND) and polycarbonate (PC). Beams of oxygen (Q=3+ and 5+) and argon (Q=1+, 4+, and 8+) ions were focused at normal incidence onto these target surfaces with fluences in the range of 10^12 – 10^13 particles per square centimeter. In-situ measurements of desorption and ex-situ measurements of surface modifications using mass spectrometry, Raman spectroscopy and XPS were made to determine ion-induced effects. The primary ion-induced results were in the HOPG and PC systems, where the ion impacts led to structural changes that could be attributed to bond breaking (both HOPG and PC) and the formation of new solid phases (HOPG to diamond-like conversion). The structural changes observed in PC indicate a charge-dependent enhancement, and, consequently, dosedependent effects with an onset at fluences three orders of magnitude below those required for singly charged ions surface processing of the same substrate. (a) Papers published in peer-reviewed journals (N/A for none) Enter List of papers submitted or published that acknowledge ARO support from the start of the project to the date of this printing. List the papers, including journal references, in the following categories: (b) Papers published in non-peer-reviewed journals (N/A for none) (c) Presentations 02/04/2015 Received Paper 2.00 Dhruva D. Kulkarni, Radhey E. Shyam, Daniel B. Cutshall, Daniel A. Field, James E. Harriss, William R. Harrell, Chad E. Sosolik. Tracking subsurface ion radiation damage with metal–oxide–semiconductor device encapsulation, Journal of Materials Research, (01 2015): 0. doi: 10.1557/jmr.2014.386 TOTAL: 1