CuInS2 Thin Films for Photovoltaic: RF Reactive Sputter Deposition and Characterization
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Physical Properties of Reactively Sputter-Deposited C-N Thin Films
This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...
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2014 Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were developed, some of their properties were characterized. CuInS2 single crystals were grown by iodine vapour transport. The habit-planes were determined to be (112) and (110). The lattice parameters were determined to be a = 5.517 Å, c = 11.122 Å (tetragonal). The as-grown crystals were n-type with r...
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AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering ...
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Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates
ABSTRACT: This work investigates the fundamental growth of c-axis oriented piezoelectric AlN thin films by RF reactive sputtering on p-type (100) and (110) silicon substrates. Substrates are treated with a 1% HF solution before deposition to remove the native oxide followed by backsputtering using argon ions. X-ray diffraction shows a (0001) oriented columnar texture of AlN grains which is the ...
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