Localized Heating, Melting, and Drilling of Silicon

نویسنده

  • P. Livshits
چکیده

The microwave drill [1] is used in this study for a localized heating of silicon plates, up to the melting point. The paper presents the experimental setup, including the heating device and the temperature measurement techniques. The experimental results show a higher rate of local temperature increase compared to other known methods. This heating method enables localized thermal processes, jointing, welding, and even drilling of >0.1-mm diameter holes in silicon for MEMS applications.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Melting and Processing of Silicon by Microwave Heating

Microwave heating is applied for processing different silicon raw materials, based on the size-, shapeand composition-dependent absorption of radiation of 2.45 and 916 MHz frequency by silicon. In model experiments directed towards the improvement of melting technology, Si-fines and chunks of bulk Silicon from Electronic Grade (EG)and Solar Grade (SG)-silicon production are used as raw material...

متن کامل

Implicit Enthalpy Method for Modelling Laser Induced Melting and Solidification of Silicon

This paper presents a numerical study of laser induced melting and solidification of crystalline Silicon (Si) using an implicit enthalpy method. The simulations are performed using the open source C++ solver known as OpenFOAM [1]. The model considers temperature dependent thermo-physical and optical properties for Si. To verify the numerical model, its predictions are compared with the experime...

متن کامل

Formation of Silicon-Gold Eutectic Bond Using Localized Heating Method

A new bonding technique is proposed by using localized heating to supply the bonding energy. Heating is achieved by applying a dc current through micromachined heaters made of gold which serves as both the heating and bonding material. At the interface of silicon and gold, the formation of eutectic bond takes place in about 5 minutes. Assembly of two substrates in microfabrication processes can...

متن کامل

Astrophysics of CAI formation as revealed by silicon isotope LA-MC-ICPMS of an igneous CAI

Silicon isotope ratios of a typical CAI from the Leoville carbonaceous chondrite, obtained in situ by laser ablation MC-ICPMS, together with existing Mg/Mg data, reveal a detailed picture of the astrophysical setting of CAI melting and subsequent heating. Models for the chemical and isotopic effects of evaporation of the molten CAI are used to produce a univariant relationship between PH2 and t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004